Semiconducting properties of undoped TiO2

被引：112

作者：

Nowotny, J

Radecka, M

Rekas, M

机构：

[1] STANISLAW STASZIC UNIV MIN & MET,PL-30059 KRAKOW,POLAND

[2] TECH UNIV CLAUSTHAL,LAB ELECT MAT,D-3392 CLAUSTHAL ZELLERF,GERMANY

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1997年 / 58卷 / 06期

关键词：

electrical conductivity; thermopower; defect chemistry; transport; band gap; titanium oxide;

D O I：

10.1016/S0022-3697(96)00204-1

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Both electrical conductivity and thermopower were studied for undoped [001] oriented TiO2 single crystals within the temperature ranges 985-1387 K and oxygen partial pressure 10(-15)-10(5) Pa. Using a Jonker-type analysis the energy gap in TiO2 was determined (E-g = 3.09-1.33 x 10(-3) T/eV). It was shown that the transport of both electrons and electron holes occurs according to the small polaron model. The electrical properties determined in this work indicate that below and above 1300 K, respectively, the predominant defects in TiO2 are doubly ionised oxygen vacancies and interstitial Ti4+ ions. (C) 1997 Elsevier Science Ltd.

引用

页码：927 / 937

页数：11

共 43 条

[1] ISOTHERMAL TRANSPORT IN TIO2-X .1. ELECTROMIGRATION IN TIO2-X [J].