Quantum confinement effects in Ge [110] nanowires

被引：42

作者：

Beckman, S. P. ^{[1
]}

Han, Jiaxin

Chelikowsky, James R.

机构：

[1] Univ Texas, Ctr Computat Mat, Inst Computat Engn & Sci, Dept Phys, Austin, TX 78712 USA

[2] Univ Texas, Dept Chem Engn, Austin, TX 78712 USA

来源：

PHYSICAL REVIEW B | 2006年 / 74卷 / 16期

关键词：

D O I：

10.1103/PhysRevB.74.165314

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effect of dimensional confinement on quantum levels is investigated for hydrogenated Ge [110] nanowires by "density-functional-theory pseudopotential" methods. The energy band dispersion is presented for wires up to 2.8 nm in diameter. By placing a H-2 molecule in vacuum for reference the bands of the different sized wires are aligned and compared. It is found that for wires with diameters smaller than 3 nm, confinement strongly affects the shape and energies of the conduction bands. It is found that the energy of the valence-band maximum does not change with diameter once a wire is greater than 2.0 nm. The valence band maximum scales with diameter D as proportional to D-2.2, and the conduction band scales as proportional to D-0.8.

引用

页数：5

共 31 条

[1] Enhanced quantum efficiency of solar cells with self-assembled Ge dots stacked in multilayer structure [J].

Alguno, A ;

Usami, N ;

Ujihara, T ;

Fujiwara, K ;

Sazaki, G ;

Nakajima, K ;

Shiraki, Y .

APPLIED PHYSICS LETTERS, 2003, 83 (06) :1258-1260

[2]

[Anonymous], 1991, SEMICONDUCTORS+, DOI DOI 10.1007/978-3-642-45681-7

[3] Strain induced photoluminescence from silicon and germanium nanowire arrays [J].

Audoit, G ;

Ní Mhuircheartaigh, T ;

Lipson, SM ;

Morris, MA ;

Blau, WJ ;

Holmes, JD .

JOURNAL OF MATERIALS CHEMISTRY, 2005, 15 (45) :4809-4815

[4] THE ELASTIC CONSTANTS OF GERMANIUM SINGLE CRYSTALS [J].

BOND, WL ;

MASON, WP ;

MCSKIMIN, HJ ;

OLSEN, KM ;

TEAL, GK .

PHYSICAL REVIEW, 1950, 78 (02) :176-176

[5] Excitons in germanium nanowires: Quantum confinement, orientation, and anisotropy effects within a first-principles approach [J].

Bruno, M ;

Palummo, M ;

Marini, A ;

Del Sole, R ;

Olevano, V ;

Kholod, AN ;

Ossicini, S .

PHYSICAL REVIEW B, 2005, 72 (15)

[6] GROUND-STATE OF THE ELECTRON-GAS BY A STOCHASTIC METHOD [J].

CEPERLEY, DM ;

ALDER, BJ .

PHYSICAL REVIEW LETTERS, 1980, 45 (07) :566-569

[7] Magic structures of H-passivated 110 silicon nanowires [J].

Chan, TL ;

Ciobanu, CV ;

Chuang, FC ;

Lu, N ;

Wang, CZ ;

Ho, KM .

NANO LETTERS, 2006, 6 (02) :277-281

[8]

Cohen M. L., 1988, SPRINGER SERIES SOLI, V75

[9] Nanowire nanosensors for highly sensitive and selective detection of biological and chemical species [J].

Cui, Y ;

Wei, QQ ;

Park, HK ;

Lieber, CM .

SCIENCE, 2001, 293 (5533) :1289-1292

[10] High performance silicon nanowire field effect transistors [J].

Cui, Y ;

Zhong, ZH ;

Wang, DL ;

Wang, WU ;

Lieber, CM .

NANO LETTERS, 2003, 3 (02) :149-152

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