Strain and texture in Al-interconnect wires measured by x-ray microbeam diffraction

被引：31

作者：

Tamura, N ^{[1
]}

Chung, JS ^{[1
]}

Ice, GE ^{[1
]}

Larson, BC ^{[1
]}

Budai, JD ^{[1
]}

Tischler, JZ ^{[1
]}

Yoon, M ^{[1
]}

Williams, EL ^{[1
]}

Lowe, WP ^{[1
]}

机构：

[1] Oak Ridge Natl Lab, Oak Ridge, TN 37831 USA

来源：

MATERIALS RELIABILITY IN MICROELECTRONICS IX | 1999年 / 563卷

关键词：

D O I：

10.1557/PROC-563-175

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The local strain and texture in Al interconnect wires have been investigated using white and monochromatic re-ray microbeams on the MHATTCAT undulator beam line at the Advanced Photon Source. Intergrain and intragrain orientations were obtained with similar to 0.01 degrees sensitivity using white bears measurements on wide Al pads (similar to 100 mu m) and thin (2 mu m) Al wires. Orientation changes of up to 1 degrees were found within individual grains of the (111) textured Al interconnects. Deviatoric strain measurements indicate small intragranular strain variations, but intergranular strain variations were found to be quite large.

引用

页码：175 / 180

页数：6

共 7 条

[1]

CHUNG JS, 1999, MAT RES SOC S P, V563

[2]

CHUNG JS, UNPUB J APPL PHYS

[3] HIGH-RESOLUTION DETERMINATION OF THE STRESS IN INDIVIDUAL INTERCONNECT LINES AND THE VARIATION DUE TO ELECTROMIGRATION [J].