Electron tunneling experiments on spin glass Ni1-xMnx films

被引：5

作者：

Hatta, E ^{[1
]}

Tonokawa, M ^{[1
]}

Nagao, J ^{[1
]}

Mukasa, K ^{[1
]}

机构：

[1] MINIST INT TRADE & IND,HOKKAIDO NATL IND RES INST,SAPPORO,HOKKAIDO 062,JAPAN

来源：

SOLID STATE COMMUNICATIONS | 1997年 / 102卷 / 06期

关键词：

disordered systems; spin glasses; thin films; tunneling;

D O I：

10.1016/S0038-1098(97)80026-9

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Systematic tunneling measurements have been performed on A/Al oxide/Ni1-xMnx junctions to study the one-particle density of states in spin glass Ni1-xMnx (x = 0.24-0.35) films where the lattice and spin disorders coexist. The strong zero bias conductance anomaly indicating the metal-insulator transition was observed at a critical concentration x(c) approximate to 0.24. This is the direct evidence that the variation of the tunneling conductance is largely due to the magnetic disorder. (C) 1997 Elsevier Science Ltd.

引用

页码：437 / 439

页数：3

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