From Ga(NO3)3 to nanocrystalline GaN:: confined nanocrystal synthesis in silica xerogels

被引：18

作者：

Yang, Y ^{[1
]}

Tran, C ^{[1
]}

Leppert, V ^{[1
]}

Risbud, SH ^{[1
]}

机构：

[1] Univ Calif Davis, Dept Chem Engn & Mat Sci, Davis, CA 95616 USA

来源：

MATERIALS LETTERS | 2000年 / 43卷 / 5-6期

基金：

美国国家科学基金会;

关键词：

GaN; III-V nitride; nanocrystal; quantum dot; xerogel; sol-gel; wide band gap;

D O I：

10.1016/S0167-577X(99)00266-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A simple chemical reaction of gallium nitrate, incorporated into a silica gel precursor, to form gallium oxide and then the nitride, leads to a composite material with nanocrystals of hexagonal phase GaN (approximately 5 nm average diameter) embedded in a silica matrix. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：240 / 243

页数：4

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