Low-dielectric-constant materials for ULSI interlayer-dielectric applications

[1] Bohr MT, 1995, INTERNATIONAL ELECTRON DEVICES MEETING, 1995 - IEDM TECHNICAL DIGEST, P241, DOI 10.1109/IEDM.1995.499187

[2] BUHR MT, 1996, ADV METALLIZATION IN, P3

[3] CASE C, 1997, MAT RES SOC S P, V476

[4] *DUMIC, 1995, P INT DIEL VLSI ULSI

[5] VLSI ON-CHIP INTERCONNECTION PERFORMANCE SIMULATIONS AND MEASUREMENTS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1995, 39 (04) : 383 - 401

[6] Fleming J. G., 1997, Advanced Metallization and Interconnect Systems for ULSI Applications in 1996, P471

[7] THE EFFECTIVE TRANSVERSE THERMAL-CONDUCTIVITY OF AMORPHOUS SI3N4 THIN-FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1994, 76 (07) : 4007 - 4011

[8] HUNTER W, 1995, IEEE INT EL DEV M, V5, P483

[9] HURD A, 1996, MRS BULL, V21, P11

[10] JAIN MK, 1996, P VLSI MULT INT C, P23

[1] Bohr MT, 1995, INTERNATIONAL ELECTRON DEVICES MEETING, 1995 - IEDM TECHNICAL DIGEST, P241, DOI 10.1109/IEDM.1995.499187

[2] BUHR MT, 1996, ADV METALLIZATION IN, P3

[3] CASE C, 1997, MAT RES SOC S P, V476

[4] *DUMIC, 1995, P INT DIEL VLSI ULSI

[5] VLSI ON-CHIP INTERCONNECTION PERFORMANCE SIMULATIONS AND MEASUREMENTS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1995, 39 (04) : 383 - 401

[6] Fleming J. G., 1997, Advanced Metallization and Interconnect Systems for ULSI Applications in 1996, P471

[7] THE EFFECTIVE TRANSVERSE THERMAL-CONDUCTIVITY OF AMORPHOUS SI3N4 THIN-FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1994, 76 (07) : 4007 - 4011

[8] HUNTER W, 1995, IEEE INT EL DEV M, V5, P483

[9] HURD A, 1996, MRS BULL, V21, P11

[10] JAIN MK, 1996, P VLSI MULT INT C, P23