Indium sulfide thin films deposited by the spray ion layer gas reaction technique

被引：61

作者：

Allsop, N. A. ^{[1
]}

Schoenmann, A. ^{[1
]}

Belaidi, A. ^{[1
]}

Muffler, H. -J. ^{[1
]}

Mertesacker, B. ^{[1
]}

Bohne, W. ^{[1
]}

Strub, E. ^{[1
]}

Roehrich, J. ^{[1
]}

Lux-Steiner, M. C. ^{[1
]}

Fischer, Ch. -H. ^{[1
]}

机构：

[1] Hahn Meitner Inst Berlin GmbH, D-14109 Berlin, Germany

来源：

THIN SOLID FILMS | 2006年 / 513卷 / 1-2期

关键词：

spray deposition; indium sulfide; ion layer gas reaction - ILGAR; X-ray diffraction; X-ray flourescence; deposition process;

D O I：

10.1016/j.tsf.2006.01.019

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The Spray Ion Layer Gas Reaction (Spray-ILGAR) technique is a new variation on the ILGAR technique used to prepare chalcogenide thin films. High quality indium sulfide thin films were produced by Spray-ILGAR with an indirect bandgap of 2.2 eV and a high suitability for use as buffer layers in chalcopyrite solar cells. The process involves the cyclical spray deposition of an indium containing precursor layer followed by its conversion to sulfide using hydrogen sulfide gas. Analysis of the deposition reveals that the indium chloride based precursor is transported via the vapour phase from the spray droplets to the substrate surface. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：52 / 56

页数：5

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