Two- and One-Dimensional Honeycomb Structures of Silicon and Germanium

被引:2867
作者
Cahangirov, S. [1 ]
Topsakal, M. [1 ]
Akturk, E. [1 ]
Sahin, H. [1 ]
Ciraci, S. [1 ,2 ]
机构
[1] Bilkent Univ, UNAM, Inst Mat Sci & Nanotechnol, TR-06800 Ankara, Turkey
[2] Bilkent Univ, Dept Phys, TR-06800 Ankara, Turkey
关键词
STATE; GAS;
D O I
10.1103/PhysRevLett.102.236804
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
First-principles calculations of structure optimization, phonon modes, and finite temperature molecular dynamics predict that silicon and germanium can have stable, two-dimensional, low-buckled, honeycomb structures. Similar to graphene, these puckered structures are ambipolar and their charge carriers can behave like a massless Dirac fermion due to their pi and pi(*) bands which are crossed linearly at the Fermi level. In addition to these fundamental properties, bare and hydrogen passivated nanoribbons of Si and Ge show remarkable electronic and magnetic properties, which are size and orientation dependent. These properties offer interesting alternatives for the engineering of diverse nanodevices.
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页数:4
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