Raman spectroscopy of hydrogen molecules in GaAs

被引：10

作者：

Leitch, AWR ^{[1
]}

Weber, J ^{[1
]}

机构：

[1] Max Planck Inst Festkorperforsch, D-70506 Stuttgart, Germany

来源：

PHYSICAL REVIEW B | 1999年 / 60卷 / 19期

关键词：

D O I：

10.1103/PhysRevB.60.13265

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The room temperature Raman vibrational modes of isolated H-2, D-2, and HD molecules in GaAs exposed to a H-2, H-2, and H-2:D-2 plasma, have been measured at 3911, 2827, and 3429 cm(-1), respectively. At low temperatures the ortho-para modes of the H-2 line are resolved. Decreasing the temperature to 10 K causes the H-2 Raman frequency to increase by 14 to 3925 cm(-1). A lack of splitting of the H-2 mode under uniaxial stress confirms that the H-2 molecule is free to rotate within the GaAs lattice. [S0163-1829(99)09043-8].

引用

页码：13265 / 13268

页数：4

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