Enhancement of hole injection in pentacene organic thin-film transistor of O2 plasma-treated Au electrodes

被引：27

作者：

Kim, Woong-Kwon ^{[1
]}

Hong, Kihyon ^{[1
]}

Leea, Jong-Lam ^{[1
]}

机构：

[1] Pohang Univ Sci & Technol, Dept Mat Sci & Engn, POSTECH, Pohang 790784, Kyungbuk, South Korea

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 14期

基金：

新加坡国家研究基金会;

关键词：

D O I：

10.1063/1.2360198

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of oxygen plasma treatment on enhancement of hole mobility was demonstrated using pentacene organic thin-film transistors (OTFTs) with bottom-contact Au electrodes. Linear field-effect mobility increased from 3.2x10(-2) to 7.4x10(-2) cm(2)/V s as the Au electrodes were treated with O-2 plasma. Secondary electron emission spectra revealed that the work function of oxygen plasma-treated Au is 0.5 eV higher than that of untreated Au. This led to a reduced hole injection barrier at the interface of Au with pentacene, increasing the field-effect mobility of OTFTs. (c) 2006 American Institute of Physics.

引用

页数：3

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