Probing intrinsic transport properties of single metal nanowires: Direct-write contact formation using a focused ion beam

被引：86

作者：

Marzi, GD ^{[1
]}

Iacopino, D ^{[1
]}

Quinn, AJ ^{[1
]}

Redmond, G ^{[1
]}

机构：

[1] NMRC, Nanotechnol Grp, Cork, Ireland

来源：

JOURNAL OF APPLIED PHYSICS | 2004年 / 96卷 / 06期

关键词：

D O I：

10.1063/1.1779972

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The transport characteristics of 70-nm-diameter platinum nanowires (NWs), fabricated using a pore-templated electrodeposition process and individually contacted using a focused ion beam (FIB) method, are reported. This approach yields nanowire devices with low contact resistances (similar to400 Omega) and linear current-voltage characteristics for current densities up to 65 kA/cm(2). The intrinsic nanowire resistivity (33+/-5 muOmega cm) indicates significant contributions from surface- and grain-boundary scattering mechanisms. Fits to the temperature dependence of the intrinsic NW resistance confirm that grain-boundary scattering dominates surface scattering (by more than a factor of 2) at all temperatures. Our results demonstrate that FIB presents a rapid and flexible method for the formation of low-resistance ohmic contacts to individual metal nanowires, allowing intrinsic nanowire transport properties to be probed. (C) 2004 American Institute of Physics.

引用

页码：3458 / 3462

页数：5

共 39 条

[1] ABSENCE OF DIFFUSION IN CERTAIN RANDOM LATTICES [J].