Lateral inhomogeneities of Cu(In,Ga)Se2 absorber films

被引：39

作者：

Eich, D

Herber, U

Groh, U

Stahl, U

Heske, C

Marsi, M

Kiskinova, M

Riedl, W

Fink, R

Umbach, E

机构：

[1] Univ Wurzburg, D-97074 Wurzburg, Germany

[2] Sincrotrone Trieste, I-34012 Trieste, Italy

[3] Siemens AG, Corp Res & Dev, D-80807 Munich, Germany

来源：

THIN SOLID FILMS | 2000年 / 361卷

关键词：

thin film solar cells; CIGS; inhomogeneity; stoichiometry; surface photovoltage; microspot-ESCA;

D O I：

10.1016/S0040-6090(99)00784-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Scanning tunneling microscopy (STM) under laser illumination and microspot X-ray photoelectron spectroscopy (micro-ESCA) have been utilized to study the local variation of the photovoltaic properties and of the stoichiometry of Cu(In,Ga)Se-2 (CIGS) thin film solar cell absorbers. The STM results clearly demonstrate that the photovoltaic quantities like the local surface photovoltage (SPV) and photoinduced tunneling current (PITC) vary significantly between different grains. This observation is in accordance with the local variation of the chemical composition of CIGS absorber films derived by micro-ESCA. In addition, the (local) photoelectric parameters vary with exposure time to red light. in agreement with recently reported metastability effects. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：258 / 262

页数：5

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