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660nm 250mW GaInP/AlInP monolithically integrated master oscillator power amplifier

被引：6
作者：
Pezeshki, B
Osinski, JS
Zelinski, M
OBrien, S
Mathur, A
机构：
[1] SDL Inc., San Jose, CA 95134
来源：
ELECTRONICS LETTERS | 1997年 / 33卷 / 15期
关键词：
power amplifiers; semiconductor junction lasers;
D O I：
10.1049/el:19970892
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The first monolithically integrated master oscillator power amplifier is reported in the GAInP/A1InP material system. A distributed Bragg reflector forms the master oscillator, and a flared amplifier provides gain. The device provides 250mW of single frequency and single spatial mode power at 664nm.
引用
收藏
页码：1314 / 1315
页数：2
相关论文
共 5 条
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IEEE PHOTONICS TECHNOLOGY LETTERS, 1997, 9 (04) :440-442
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ELECTRONICS LETTERS, 1996, 32 (24) :2241-2243
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