Formation of InSb by annealing Sb2S3-In thin films

被引：9

作者：

Nair, MTS ^{[1
]}

Rodríguez-Lazcano, Y ^{[1
]}

Nair, PK ^{[1
]}

机构：

[1] Univ Nacl Autonoma Mexico, Dept Solar Energy Mat, Ctr Invest Energia, Temixco 62580, Morelos, Mexico

来源：

JOURNAL OF CRYSTAL GROWTH | 2000年 / 208卷 / 1-4期

关键词：

chemical bath deposition; indium antimonide; antimony sulfide;

D O I：

10.1016/S0022-0248(99)00472-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We report a method to produce large area indium antimonide thin films through a reaction in solid state between thin films of Sb2S3 and In (Sb2S3 + 2 In --> 2 InSb + 3 S up arrow). A thin him of Sb2S3 with typically 0.2. mu m thickness is produced on glass substrate by chemical bath deposition at 10 degrees C using thiosulfatoantimonate(III) complex. Subsequently, a thin film of indium is deposited on the Sb2S3 film by thermal evaporation. Annealing the thin film stack of Sb2S3-In at 300 degrees C under nitrogen atmosphere produces the InSb thin film. The formation of this him is confirmed by X-ray diffraction studies. We discuss the optimization of the individual film thickness in the Sb2S3-In stack to produce a thin film of single-phase InSb or a heterostructure, Sb2S3-InSb. The electrical and optical properties of the films are presented. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：248 / 252

页数：5

共 10 条

[1] ELECTROCHEMICAL CODEPOSITION OF INDIUM AND ANTIMONY FROM A CHLOROINDATE MOLTEN-SALT [J].