Domain processes in the magnetization reversal of exchange-biased IrMn/CoFe bilayers

被引:33
作者
Gogol, P [1 ]
Chapman, JN
Gillies, MF
Vanhelmont, FWM
机构
[1] Univ Glasgow, Dept Phys & Astron, Glasgow G12 8QQ, Lanark, Scotland
[2] Philips Res Labs, NL-5656 AA Eindhoven, Netherlands
关键词
D O I
10.1063/1.1489494
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have used transmission electron microscopy to study directly the way magnetization reversal proceeds in the ferromagnetic layer for sets of bilayers in which the ferromagnetic layer (CoFe) was of constant thickness while the thickness of the antiferromagnetic layer (IrMn) was varied. The first set studied was in the as-deposited state while the second was subjected to rapid thermal processing. For IrMn thicknesses of 20 Angstrom, no shift fields were observed, although significant coercivities (similar to70 Oe) were recorded and reversal involved rather simple domain processes. By contrast, complex small-scale domains dominated the reversal processes for samples where the IrMn thickness exceeded 60 Angstrom; here, strong exchange biasing and higher coercivities were the norm. For all thicknesses of IrMn, an unexpected variation in the dominant orientation of domain walls on the outward and return parts of the magnetization cycle tended to be observed. A possible origin of this, together with the differences between the as-deposited samples and those subjected to rapid thermal processing, are discussed. (C) 2002 American Institute of Physics.
引用
收藏
页码:1458 / 1465
页数:8
相关论文
共 27 条
[1]   Exchange anisotropy - a review [J].
Berkowitz, AE ;
Takano, K .
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 1999, 200 (1-3) :552-570
[2]   Magnetization dynamics: A study of the ferromagnet/antiferromagnet interface and exchange biasing [J].
Camley, RE ;
McGrath, BV ;
Astalos, RJ ;
Stamps, RL ;
Kim, JV ;
Wee, L .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1999, 17 (04) :1335-1339
[3]   COHERENT MAGNETIC IMAGING BY TEM [J].
CHAPMAN, JN ;
JOHNSTON, AB ;
HEYDERMAN, LJ ;
MCVITIE, S ;
NICHOLSON, WAP ;
BORMANS, B .
IEEE TRANSACTIONS ON MAGNETICS, 1994, 30 (06) :4479-4484
[5]   Asymmetric magnetization reversal in exchange-biased hysteresis loops [J].
Fitzsimmons, MR ;
Yashar, P ;
Leighton, C ;
Schuller, IK ;
Nogués, J ;
Majkrzak, CF ;
Dura, JA .
PHYSICAL REVIEW LETTERS, 2000, 84 (17) :3986-3989
[6]   MAGNETIZATION REVERSAL MECHANISMS IN NIFE/CU/NIFE/FEMN SPIN-VALVE STRUCTURES [J].
GILLIES, MF ;
CHAPMAN, JN ;
KOOLS, JCS .
JOURNAL OF APPLIED PHYSICS, 1995, 78 (09) :5554-5562
[7]   Effect of thin oxide layers incorporated in spin valve structures [J].
Gillies, MF ;
Kuiper, AET ;
Leibbrandt, GWR .
JOURNAL OF APPLIED PHYSICS, 2001, 89 (11) :6922-6924
[8]   EXCHANGE ANISOTROPY PROPERTIES IN SULFIDED IRON FILMS [J].
GREINER, JH .
JOURNAL OF APPLIED PHYSICS, 1966, 37 (03) :1474-&
[9]  
JACOBS IS, 1963, MAGNETISM, V3, P323
[10]   On the free layer reversal mechanism of FeMn-biased spin-valves with parallel anisotropy [J].
King, JP ;
Chapman, JN ;
Kools, JCS ;
Gillies, MF .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1999, 32 (10) :1087-1096