Epitaxial growth of Bi2O2.33 by halide CVD

Bismuth oxide is an interesting dielectric material with potential applications for optical coatings, MIS capacitors, and microwave integrated circuits. CVD growth has a number of advantages over other deposition techniques, e.g., precise control of oxygen activity, microstructure, and texture. The study presented here shows how this can be achieved for epitaxial Bi2O2.33 films grown on SrTiO3 and MgO (see Figure) using halide CVD with BiI3 as the bismuth source.