Generalized models for optimization of BTI in SiON and high-k dielectrics

被引：1

作者：

Haggag, A. ^{[1
]}

Kalpat, S. ^{[1
]}

Moosa, M. ^{[1
]}

Liu, N. ^{[1
]}

Kuffler, M. ^{[1
]}

Tseng, H. -H. ^{[1
]}

Luo, T. -Y. ^{[1
]}

Schaeffer, J. ^{[1
]}

Gilmer, D. ^{[1
]}

Samavedam, S. ^{[1
]}

Hegde, R. ^{[1
]}

White, B. E., Jr. ^{[1
]}

Tobin, P. J. ^{[1
]}

机构：

[1] Freescale Semicond Inc, 3501 Ed Bluestein Blvd,MD K-10, Austin, TX 78721 USA

来源：

2006 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 44TH ANNUAL | 2006年

关键词：

D O I：

10.1109/RELPHY.2006.251314

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A generalized reliability model of BTI is presented where it is shown that gate stacks with similar interfacial layer lie on the same NBTI vs E-field universal curve and those with similar bulk layer He on the same PBTI vs E-field universal curve. From these universal curves, an optimal gate stack can be derived for which NBTI=PBTI.

引用

页码：665 / +

页数：2