Investigation of laser-ablated ZnO thin films grown with Zn metal target:: A structural study

被引:45
作者
Fouchet, A
Prellier, W
Mercey, B
Méchin, L
Kulkarni, VN
Venkatesan, T
机构
[1] Lab CRISMAT, CNRS, UMR 6508, F-14050 Caen, France
[2] ENSICAEN, Lab GREYC, CNRS, UMR 6072, F-14050 Caen, France
[3] Univ Caen, F-14050 Caen, France
[4] Univ Maryland, Ctr Superconduct Res, College Pk, MD 20742 USA
关键词
D O I
10.1063/1.1772891
中图分类号
O59 [应用物理学];
学科分类号
摘要
High quality ZnO thin films were grown using the pulsed laser deposition technique on (0001) Al2O3 substrates in an oxidizing atmosphere, using a Zn metallic target. We varied the growth conditions such as the deposition temperature and the oxygen pressure. First, using a battery of techniques such as x-ray diffraction, Rutherford-backscattering spectroscopy, and atomic force microscopy, we evaluated the structural quality, the stress, and the degree of epitaxy of the films. Second, the relations between the deposition conditions and the structural properties that are directly related to the nature of the thin films are discussed qualitatively. Finally, a number of issues on how to get good-quality ZnO films are addressed. (C) 2004 American Institute of Physics.
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页码:3228 / 3233
页数:6
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