Optimization of lead- and cadmium-free front contact silver paste formulation to achieve high fill factors for industrial screen-printed Si solar cells

被引:38
作者
Jeon, Seong Je [1 ,2 ]
Koo, Sang Man [2 ]
Hwang, Seon Am [1 ]
机构
[1] Taiyo Ink MFG Co Ltd, Res Inst, Elect Mat Div, Ansan 425839, Gyeonggi Do, South Korea
[2] Hanyang Univ, Dept Chem Engn, Hybrid Nono Particle Lab, Seoul 133791, South Korea
关键词
Lead-free front contact; Silver paste formulation; Screen printed; Silicon solar cell;
D O I
10.1016/j.solmat.2009.01.003
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
Screen-printed n(+)-p-p(+) solar cells were fabricated on Cz single crystalline Si material, with a 45 Omega/sq emitter and PECVD SiNx antireflective coating with a thickness of 700 angstrom, using different Ag pastes and commercial leaded reference paste (CN33-462. Ferro Corp.). Ag and Al contacts were co-fired using a mass-production line equipped with mesh belt conveyer furnace systems (Centrotherm thermal solution GmbH & Co. KG). The average results for single crystalline Si solar cells (156 cm(2)) are: I-sc = 5.043 A, V-oc = 0.621 V, R-s = 0.0087 Omega, R-sh = 15.3 Omega, FF = 0.773, and E-ff = 16.45%. R-sh and fill factor values of fabricated cells were slightly higher when compared with the commercial leaded Ag paste, although cells were fabricated by metallizing the lead-free silver pastes. For the lead-free Ag paste used in this study, the line pattern continuity is retained with improved edge definition in sharp contrast to that of reference Ag paste. Average value of R-s was also equivalent approximately to that of the leaded Ag paste. (C) 2009 Published by Elsevier B.V.
引用
收藏
页码:1103 / 1109
页数:7
相关论文
共 11 条
[1]  
BAHR M, 2006, P 21 EUR PHOT SOL EN, P859
[2]   Silver thick-film contacts on highly doped n-type silicon emitters:: Structural and electronic properties of the interface [J].
Ballif, C ;
Huljic, DM ;
Willeke, G ;
Hessler-Wyser, A .
APPLIED PHYSICS LETTERS, 2003, 82 (12) :1878-1880
[3]  
GOETZBERGER A, 1998, CRYSTALLINE SILICON, P69
[4]   Development of screen-printed silicon solar cells with high fill factors on 100 Ω/sq emitters [J].
Hilali, MM ;
Rohatgi, A .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2004, 51 (06) :948-955
[5]  
HOORNSTRA J, 2005, P 31 IEEE PHOT SPEC, P651
[6]  
KHADILKAR C, 2004, INT PVSEC 14 BANGK T, P635
[7]   Optimization and characterization of remote plasma-enhanced chemical vapor deposition silicon nitride for the passivation of p-type crystalline silicon surfaces [J].
Lauinger, T ;
Moschner, J ;
Aberle, AG ;
Hezel, R .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1998, 16 (02) :530-543
[8]  
Markvart T, 2005, SOLAR CELLS: MATERIALS, MANUFACTURE AND OPERATION, P5, DOI 10.1016/B978-185617457-2/50002-0
[9]   Comparative study of metal-semiconductor contact degradation by current pulses on silicon solar cells with two contact types [J].
Perez-Quintana, I ;
Martel, A ;
Hernández, L .
SOLID-STATE ELECTRONICS, 2001, 45 (12) :2017-2021
[10]   Effect of inorganic binders on the properties of silver thick films [J].
Rane, SB ;
Seth, T ;
Phatak, GJ ;
Amalnerkar, DP ;
Ghatpande, M .
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2004, 15 (02) :103-106