New plating bath for electroless copper deposition on sputtered barrier layers

被引：42

作者：

Lantasov, Y

Palmans, R

Maex, K

机构：

[1] IMEC, B-3001 Louvain, Belgium

[2] KU Leuven, INSYS, Louvain, Belgium

来源：

MICROELECTRONIC ENGINEERING | 2000年 / 50卷 / 1-4期

关键词：

interconnection; copper; electroless deposition;

D O I：

10.1016/S0167-9317(99)00313-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new copper plating bath for electroless deposition directly on conductive copper-diffusion barrier layers has been developed. This plating bath can be operated at temperatures between 20 and 50 degrees C and has good stability. High temperature processing allows for increased deposition rates and decreased specific resistivity values for the deposited copper films. Electroless Cu films deposited from this bath showed a conformal step coverage in high aspect ratio trenches and, therefore, are promising as seed layers for copper electroplating. The effect of the bath composition, activation procedure and processing temperature on the plating rate and morphology of the deposited copper has been studied and is presented here. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：441 / 447

页数：7

共 4 条

[1] Effect of thin-film texture and zirconium diffusion on reliability against electromigration in chemical-vapor-deposited copper interconnects [J].