Transient carrier velocities in bulk GaAs: Quantitative comparison between terahertz data and ensemble Monte Carlo calculations

被引:34
作者
Abe, M
Madhavi, S
Shimada, Y
Otsuka, Y
Hirakawa, K
Tomizawa, K
机构
[1] Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan
[2] Meiji Univ, Dept Comp Sci, Tama Ku, Kawasaki, Kanagawa 2148571, Japan
[3] Japan Sci & Technol Corp, CREST, Tokyo, Japan
关键词
D O I
10.1063/1.1495540
中图分类号
O59 [应用物理学];
学科分类号
摘要
Transient carrier velocities determined from terahertz radiation emitted from photoexcited bulk GaAs have been compared with ensemble Monte Carlo calculations. It is found that, if actual experimental conditions (sample geometry, photoexcitation condition, etc.) are properly taken into account, Monte Carlo calculations give a very good description of the transient carrier velocities determined from THz measurements. Although the THz signal is dominated by electron transport, contribution of holes becomes appreciable when the electric field is higher than 20 kV/cm. (C) 2002 American Institute of Physics.
引用
收藏
页码:679 / 681
页数:3
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