A study of moisture effects on Ti/porous silicon/silicon Schottky barrier

被引：21

作者：

Strikha, V ^{[1
]}

Skryshevsky, V

Polishchuk, V

Souteyrand, E

Martin, JR

机构：

[1] Kiev Natl Shevchenko Univ, Radiophys Dept, Kiev, Ukraine

[2] Ecole Cent Lyon, IFOS Grp Physicochim Interfaces, Ecully, France

来源：

JOURNAL OF POROUS MATERIALS | 2000年 / 7卷 / 1-3期

关键词：

porous Si; Schottky barrier; moisture sensor;

D O I：

10.1023/A:1009634720436

中图分类号：

O69 [应用化学];

学科分类号：

081704 ;

摘要：

Results of capacitance-voltage and current-voltage measurements performed on Ti/porous silicon (PS)/p-Si diode structures are presented. A 5-10 increase of conductivity and capacity has been observed at f < 10000 Hz in response to the moisture change from 0 to 50%. Model of Schottky contact on thin PS layer with the charge carriers inside of pores and PS/Si interface is applied to explain the frequency dependence of conductivity/capacity as well as moisture effect.

引用

页码：111 / 114

页数：4

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