Spin-valve-like properties of ferromagnetic tunnel junctions

被引:25
作者
Sato, M
Kobayashi, K
机构
[1] Fujitsu Laboratories Ltd., Atsugi 243-01
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1997年 / 36卷 / 2B期
关键词
ferromagnetic; tunnel; junction; Al; spin-valve; MR;
D O I
10.1143/JJAP.36.L200
中图分类号
O59 [应用物理学];
学科分类号
摘要
Ferromagnetic tunnel junctions with naturally oxidized Al barriers were fabricated by magnetron sputtering. Using metal masks, 0.01 mm(2) junction areas were patterned. Junctions with slightly oxidized Al barriers showed small tunnel resistances. Of those, some had extraordinarily large MR ratios, others had different tunnel resistances according to different current-flow paths, and-Some had characteristics of both, In contrast, junctions with well oxidized Al barriers exhibited a large tunnel resistance and good stability. The Ni-Fe/Co/Al-AlOx/Co/Ni-Fe/Fe-Mn/Ni-Fe junction showed spin-valve-like R-H properties. The MR ratio was 10% for a 20 Oe magnetic field.
引用
收藏
页码:L200 / L201
页数:2
相关论文
共 5 条
[1]   TUNNELING BETWEEN FERROMAGNETIC-FILMS [J].
JULLIERE, M .
PHYSICS LETTERS A, 1975, 54 (03) :225-226
[2]   ELECTRON-TUNNELING BETWEEN FERROMAGNETIC-FILMS [J].
MAEKAWA, S ;
GAFVERT, U .
IEEE TRANSACTIONS ON MAGNETICS, 1982, 18 (02) :707-708
[3]  
MIYAZAKI T, 1995, J MAGN MAGN MATER, V139, pL231, DOI 10.1016/0304-8853(94)01648-8
[4]   Geometrically enhanced magnetoresistance in ferromagnet-insulator-ferramagnet tunnel junctions [J].
Moodera, JS ;
Kinder, LR ;
Nowak, J ;
LeClair, P ;
Meservey, R .
APPLIED PHYSICS LETTERS, 1996, 69 (05) :708-710