Effect of stray capacitances in a multiple-tunnel junction memory device

被引：2

作者：

Jalil, MBA

Wagner, M ^{[1
]}

机构：

[1] Univ Cambridge, Cavendish Lab, Microelect Res Ctr, Cambridge CB3 0HE, England

[2] Univ Cambridge, Cavendish Lab, Hitachi Cambridge Lab, Cambridge CB3 0HE, England

来源：

PHYSICA B-CONDENSED MATTER | 1999年 / 272卷 / 1-4期

关键词：

retention time; multi-junction trap; stray capacitance;

D O I：

10.1016/S0921-4526(99)00251-3

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The retention time of a multiple-tunnel junction (MTJ) trap device is investigated, taking into account the effects of stray capacitances, which have been neglected so far. Using the image-soliton method, the exact solution to Gibb's energy change of tunnelling across the MTJ is obtained. The I-V characteristics and the retention time are then approximated via a much-reduced Master Equation. It is found that the stability of the trap is not adversely affected by stray capacitances provided that temperature is kept low. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：92 / 95

页数：4

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