Re-entrant metal-insulator transitions in Si-SiGe-Si heterostructures

被引：9

作者：

DIorio, M

Stewart, D

Deblois, S

Brown, D

Noel, JP

机构：

[1] National Research Council Canada, IMS, Ottawa

来源：

SURFACE SCIENCE | 1996年 / 361卷 / 1-3期

关键词：

electrical transport; electrical transport measurements; magnetic phenomena; quantum effects; quantum wells; semiconductor-semiconductor heterostructures; silicon-germanium;

D O I：

10.1016/0039-6028(96)00569-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We have studied the low-temperature transport properties of p-type Si/si(0.87)Ge(0.13)/Si modulation doped heterostructures as a function of SiGe well width. We have observed re-entrant metal-insulator transitions in the quantum Hall effect regime at half-filled Landau levels. We report on the non-linear current-voltage characteristics and the thermal activation of the diagonal resistivity associated with these transitions. We have also studied the temperature dependence of the resistivity at zero magnetic field as a function of well width and present evidence for a metal-insulator transition.

引用

页码：937 / 940

页数：4

共 13 条

[1] CYCLOTRON-RESONANCE STUDIES OF 2-DIMENSIONAL HOLES IN STRAINED SI1-XGEX/SI QUANTUM-WELLS [J].