Novel porous films having low dielectric constants synthesized by liquid phase silylation of spin-on glass sol for intermetal dielectrics

被引:42
作者
Aoi, N
机构
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1997年 / 36卷 / 3B期
关键词
SOG; intermetal dielectrics; porous film; liquid phase silylation; low k dielectrics; nanofoam;
D O I
10.1143/JJAP.36.1355
中图分类号
O59 [应用物理学];
学科分类号
摘要
A novel technique for synthesis of highly porous inorganic SOG films such as aerogels using conventional spin-on processing has been developed. The porous films exhibit dielectric constants as low as 2.3 and the average pore diameter was about 80 nm. The relative dielectric constants of the films compare favorably with those of organic polymers, and the films were demonstrated to exhibit relatively low hygroscopic characteristics. This novel technique for synthesis of porous film is the first step in the development of nanofoam materials for future low k dielectrics.
引用
收藏
页码:1355 / 1359
页数:5
相关论文
共 12 条
[1]  
[Anonymous], S VLSI
[2]  
Bohr MT, 1995, INTERNATIONAL ELECTRON DEVICES MEETING, 1995 - IEDM TECHNICAL DIGEST, P241, DOI 10.1109/IEDM.1995.499187
[3]  
BRINKER CJ, 1990, SOL GEL SCI PHYSICS
[4]  
ENDO K, 1996, 1996 INT C SOL STAT, P818
[5]  
HAYASAKA N, 1995, ADV METALLIZATION IN, P81
[6]  
HORI H, 1992, OYO BUTURI, V40, P12
[7]  
LAU KS, 1995, ADV METALLIZATION IN, P107
[8]   SILICA AEROGEL FILMS AT AMBIENT-PRESSURE [J].
PRAKASH, SS ;
BRINKER, CJ ;
HURD, AJ .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1995, 190 (03) :264-275
[9]  
Rahmat K, 1995, INTERNATIONAL ELECTRON DEVICES MEETING, 1995 - IEDM TECHNICAL DIGEST, P245, DOI 10.1109/IEDM.1995.499188
[10]  
SHUCHMANN S, 1996 DIEL VLSI ULSI, P135