Field induced photoluminescence quenching and enhancement of CdSe nanocrystals embedded in SiO2

被引：16

作者：

Achtstein, A. W. ^{[1
]}

Karl, H. ^{[1
]}

Stritzker, B. ^{[1
]}

机构：

[1] Univ Augsburg, Inst Phys, D-86135 Augsburg, Germany

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 06期

关键词：

Cadmium compounds - Crystal structure - Electric fields - Ion implantation - Photoluminescence - Quenching - Silica;

D O I：

10.1063/1.2335591

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors describe the operation of an electro-optical photoluminescence quenching device based on CdSe nanoclusters formed using sequential ion implantation of Cd+ and Se+ in thermally grown SiO2 on silicon. A sample geometry consisting of a semitransparent gold electrode on top and an ohmic contact to the p-doped Si on the reverse side of the device was chosen to apply high electric fields. Under high field strength an effective photoluminescence quenching and enhancement with a dynamical range of more than one order in magnitude have been observed. Field induced Stark shift has not been seen most probably due to polarization effects. (c) 2006 American Institute of Physics.

引用

页数：3

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