Saturation effects in Y2SiO5:Tb under low-voltage excitation

被引：12

作者：

Stoffers, C ^{[1
]}

Lee, RY ^{[1
]}

Penczek, J ^{[1
]}

Wagner, BK ^{[1
]}

Summers, CJ ^{[1
]}

机构：

[1] Georgia Inst Technol, Phosphor Technol Ctr Excellence, Atlanta, GA 30332 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 08期

关键词：

D O I：

10.1063/1.125901

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Low-voltage field emission device phosphors that are excited at high current densities often exhibit brightness saturation with increasing current. The physical processes responsible for saturation can be complex, with several mechanisms contributing, including ground state depletion and excited energy transfer. A two-level model, in conjunction with cathodoluminescence brightness and transient measurements, is used to show the influence of ground state depletion and thermal quenching on the saturation behavior of Y2SiO5:Tb under low-voltage excitation. (C) 2000 American Institute of Physics. [S0003-6951(00)00908-6].

引用

页码：949 / 951

页数：3

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