Measurements on micromachined silicon accelerometers with piezoelectric sensor action

被引:15
作者
Eichner, D
Giousouf, M
von Münch, W
机构
[1] Univ Stuttgart, Inst Halbleitertech, D-70569 Stuttgart, Germany
[2] Univ Stuttgart, Inst Zeitmesstech Fein & Mikrotech, D-70174 Stuttgart, Germany
关键词
accelerometer; bulk micromachining; silicon; piezoelectric layers; sol-gel process;
D O I
10.1016/S0924-4247(99)00039-4
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, the results of electrical, mechanical (vibration) and electromechanical (sensitivity) measurements on micromachined accelerometer devices with four piezoelectric read-out capacitors are presented. The average capacitance at 1 kHz is 1.2 nF with a Q-factor of 62. The resonance frequencies (in vacuum) of the first two bending modes and the first torsional mode are 12.35 kHz, 26.38 kHz and 17.95 kHz, respectively. The Q-factor of the first bending mode decreases from about 50 in vacuum (0.1 mbar) to 25 at atmospheric pressure. With a sinusoidal excitation at 1.26 kHz, the average accelerometer sensitivity is around 0.1 mV/g; a slight increase of the sensitivity is found in the range from 1 kHz to 6 kHz. (C) 1999 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:247 / 252
页数:6
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