Optical spectral holeburning with Raman coherent population trapping

被引：4

作者：

Hemmer, PR

Shahriar, MS

Ham, BS

Kim, MK

Rozhdestvensky, Y

机构：

[1] MIT,ELECT RES LAB,CAMBRIDGE,MA 02139

[2] UNIV S FLORIDA,DEPT PHYS,TAMPA,FL 33620

[3] SI VAVILOV STATE OPT INST,ST PETERSBURG 199034,RUSSIA

来源：

MOLECULAR CRYSTALS AND LIQUID CRYSTALS SCIENCE AND TECHNOLOGY SECTION A-MOLECULAR CRYSTALS AND LIQUID CRYSTALS | 1996年 / 291卷

基金：

美国国家科学基金会;

关键词：

D O I：

10.1080/10587259608042758

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Optical spectral holeburning is examined for the case when two-frequency Raman resonant laser excitation is used in place of conventional single frequency excitation. It is found that Raman coherent population trapping can be used to increase storage capacity beyond the limit given by the ratio of optical inhomogeneous to homogeneous Linewidths. This is possible because Raman population trapping provides an additional storage dimension. Theoretical analysis and practical issues are presented.

引用

页码：287 / 294

页数：8

共 13 条

[1] EXPERIMENTAL-METHOD FOR OBSERVATION OF RF TRANSITIONS AND LASER BEAT RESONANCES IN ORIENTED NA VAPOR [J].