Formation of induced anisotropy in amorphous Sm-Fe based thin films by field sputtering

被引:21
作者
Lim, SH [1 ]
Han, SH
Kim, HJ
Song, SH
Lee, D
机构
[1] Korea Inst Sci & Technol, Thin Film Technol Res Ctr, Seoul 136791, South Korea
[2] Korea Univ, Dept Mat Sci & Engn, Seoul 136701, South Korea
关键词
D O I
10.1063/1.372527
中图分类号
O59 [应用物理学];
学科分类号
摘要
Induced anisotropy with a large energy of 6x10(4) J/m(3) is formed in an amorphous Sm-Fe based thin film by sputtering under an applied magnetic field of 500-600 Oe. The induced anisotropy results in a large anisotropy in magnetostriction, a strain anisotropy ratio reaching as high as 35, although intrinsic magnetostriction is affected only slightly. The large strain anisotropy allows one to realize a large strain in a particular direction and, hence, it is of significant practical importance. Induced anisotropy is also found to be formed by postannealing under applied magnetic field, but the magnitude of anisotropy energy formed is very small. (C) 2000 American Institute of Physics. [S0021-8979(00)16508-9].
引用
收藏
页码:5801 / 5803
页数:3
相关论文
共 7 条
[1]  
[Anonymous], FERROMAGNETIC MAT
[2]  
HANSEN P, 1991, HDB MAGNETIC MAT, V6, pCH4
[3]  
Lim SH, 1998, IEEE T MAGN, V34, P2042, DOI 10.1109/20.706786
[4]   Magnetostriction of Tb-Fe-(B) thin films fabricated by RF magnetron sputtering [J].
Lim, SH ;
Choi, YS ;
Han, SH ;
Kim, HJ ;
Shima, T ;
Fujimori, H .
IEEE TRANSACTIONS ON MAGNETICS, 1997, 33 (05) :3940-3942
[5]   Magnetostriction of Sm-Fe and Sm-Fe-B thin films fabricated by RF magnetron sputtering [J].
Lim, SH ;
Choi, YS ;
Han, SH ;
Kim, HJ ;
Shima, T ;
Fujimori, H .
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 1998, 189 (01) :1-7
[6]  
LUBORSKY FE, 1977, IEEE T MAGN, V13, P953, DOI 10.1109/TMAG.1977.1059494
[7]   PREPARATION AND APPLICATIONS OF MAGNETOSTRICTIVE THIN-FILMS [J].
QUANDT, E ;
GERLACH, B ;
SEEMANN, K .
JOURNAL OF APPLIED PHYSICS, 1994, 76 (10) :7000-7002