Performance of three variants of micro-gap chambers

被引：11

作者：

Clergeau, JF ^{[1
]}

Contardo, D ^{[1
]}

Haroutunian, R ^{[1
]}

Mirabito, L ^{[1
]}

Smadja, G ^{[1
]}

机构：

[1] INST PHYS NUCL,F-69622 VILLEURBANNE,FRANCE

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1997年 / 392卷 / 1-3期

关键词：

D O I：

10.1016/S0168-9002(97)00288-X

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Measurements with variants of micro-gap chambers built on silicon wafers are reported: - we compare the ability of the detectors to sustain high voltage on the cathodes for two fabrication processes; - we present results on the measurement of the second coordinate with small stereo angle cathodes and for two kinds of insulating layer on the silicon; - we discuss a first attempt to build a one-dimensional micro-gap chamber with a single metal layer.

引用

页码：140 / 144

页数：5

共 4 条

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[4]

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