Study on the resistive switching time of TiO2 thin films

被引：105

作者：

Choi, Byung Joon ^{[1
]}

Choi, Seol

Kim, Kyung Min

Shin, Yong Cheol

Hwang, Cheol Seong

Hwang, Sung-Yeon

Cho, Sung-sil

Park, Sanghyun

Hong, Suk-Kyoung

机构：

[1] Seoul Natl Univ, Sch Mat Sci & Engn, Seoul 151744, South Korea

[2] Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 151744, South Korea

[3] Hynix Semicond Co, Memory R&D Ctr, Ichon 467701, Kyoungki Do, South Korea

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 01期

关键词：

D O I：

10.1063/1.2219726

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The required time for voltage-pulse-induced resistive switching of 40-nm-thick TiO2 thin films integrated in a contact-type structure (Pt top and TiN bottom contact, contact area similar to 0.07 mu m(2)) was studied as a function of pulse voltage. For off -> on switching at least 2 V was necessary and the minimum switching times were similar to 20 ns at 2 V and similar to 10 ns at 3 V. For on -> off switching, a minimum switching time of 5 mu s was obtained at 2.5 V. The resistance of the on-state device was also dependent on the switching voltage and time. (c) 2006 American Institute of Physics.

引用

页数：3

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