Effect of p-doped overlayer thickness on RF-dispersion in GaN junction FETs

被引：19

作者：

Jiménez, A ^{[1
]}

Buttari, D

Jena, D

Coffie, R

Heikman, S

Zhang, NQ

Shen, L

Calleja, E

Muñoz, E

Speck, J

Mishra, UK

机构：

[1] Univ Politecn Madrid, ETSI Telecommun, Dept Ingn Elect, E-28040 Madrid, Spain

[2] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[3] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2002年 / 23卷 / 06期

关键词：

GaN; JFET; passivation; RF-dispersion;

D O I：

10.1109/LED.2002.1004217

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Successive reactive ion etchings (RIE) were performed on the access regions of p(+)-n GaN JFETs. A decrease in the n-layer sheet resistance, with a consequent increase in I-DSS was detected after complete removal of the p-layer, due to a reduction in the n-layer depletion region. An increase in RF-dispersion was experienced, as a result of the progressive reduction of screening from surface-states originally provided by the overlying p-cap layer. No dispersion was detected before cap removal. A continuous increase in f(t) and f(max) was detected even before complete removal of the p-layer, due to virtual gate length reduction. It is expected that an optimized p-doped overlayer will provide current slump suppression without degradation in cutoff frequency or breakdown.

引用

页码：306 / 308

页数：3

共 8 条

[1] Trapping effects and microwave power performance in AlGaN/GaN HEMTs [J].

Binari, SC ;

Ikossi, K ;

Roussos, JA ;

Kruppa, W ;

Park, D ;

Dietrich, HB ;

Koleske, DD ;

Wickenden, AE ;

Henry, RL .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (03) :465-471

[2] The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMT's [J].

Green, BM ;

Chu, KK ;

Chumbes, EM ;

Smart, JA ;

Shealy, JR ;

Eastman, LF .

IEEE ELECTRON DEVICE LETTERS, 2000, 21 (06) :268-270

[3] Optimization of the surface morphologies and electron mobilities in GaN grown by plasma-assisted molecular beam epitaxy [J].

Heying, B ;

Smorchkova, I ;

Poblenz, C ;

Elsass, C ;

Fini, P ;

Den Baars, S ;

Mishra, U ;

Speck, JS .

APPLIED PHYSICS LETTERS, 2000, 77 (18) :2885-2887

[4] Si3N4/AlGaN/GaN-metal-insulator-semiconductor heterostructure field-effect transistors [J].

Hu, X ;

Koudymov, A ;

Simin, G ;

Yang, J ;

Khan, MA ;

Tarakji, A ;

Shur, MS ;

Gaska, R .

APPLIED PHYSICS LETTERS, 2001, 79 (17) :2832-2834

[5] Drain current compression in GaN MODFETs under large-signal modulation at microwave frequencies [J].

Nguyen, C ;

Nguyen, NX ;

Grider, DE .

ELECTRONICS LETTERS, 1999, 35 (16) :1380-1382

[6] The impact of surface states on the DC and RF characteristics of A1GaN/GaN HFETs [J].

Vetury, R ;

Zhang, NQQ ;

Keller, S ;

Mishra, UK .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (03) :560-566

[7] Epitaxially-grown GaN junction field effect transistors [J].

Zhang, L ;

Lester, LF ;

Baca, AG ;

Shul, RJ ;

Chang, PC ;

Willison, CG ;

Mishra, UK ;

Denbaars, SP ;

Zolper, JC .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2000, 47 (03) :507-511

[8] Ion-implanted GaN junction field effect transistor [J].

Zolper, JC ;

Shul, RJ ;

Baca, AG ;

Wilson, RG ;

Pearton, SJ ;

Stall, RA .

APPLIED PHYSICS LETTERS, 1996, 68 (16) :2273-2275

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