350.9 nm UV laser diode grown on low-dislocation-density AlGaN

被引：153

作者：

Iida, K ^{[1
]}

Kawashima, T ^{[1
]}

Miyazaki, A ^{[1
]}

Kasugai, H ^{[1
]}

Mishima, S ^{[1
]}

Honshio, A ^{[1
]}

Miyake, Y ^{[1
]}

Iwaya, M ^{[1
]}

Kamiyama, S ^{[1
]}

Amano, H ^{[1
]}

Akasaki, I ^{[1
]}

机构：

[1] Meijo Univ, Fac Sci & Technol, Hightech Res Ctr, 21st Century COE Program Nano Factory,Tempaku Ku, Nagoya, Aichi 4688502, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2004年 / 43卷 / 4A期

关键词：

UV laser diode; dislocation; AlGaN; GaN; LT-AIN interlayer; heteroepitaxial lateral overgrowth;

D O I：

10.1143/JJAP.43.L499

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrated a UV-laser diode grown on low-dislocation-density AlGaN. The combination of a low-temperature-deposited AIN interlayer technology and heteroepitaxial lateral overgrowth yielded crack-free and partially low-dislocation-density AlGaN on,a grooved GaN substrate. A ridge waveguide was fabricated in the low-dislocation-density region. The lasing wavelength under pulsed current injection at room temperature was 350.9 nm, which is the shortest wavelength ever reported.

引用

页码：L499 / L500

页数：2

共 15 条

[1] GROWTH AND LUMINESCENCE PROPERTIES OF MG-DOPED GAN PREPARED BY MOVPE [J].