Impact of moisture on charge trapping and flatband voltage in Al2O3 gate dielectric films

被引：39

作者：

Zafar, S ^{[1
]}

Callegari, A ^{[1
]}

Narayanan, V ^{[1
]}

Guha, S ^{[1
]}

机构：

[1] IBM Corp, Res, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 14期

关键词：

Moisture - Aluminum oxide - Alumina - Temperature - Dielectric films - Gate dielectrics;

D O I：

10.1063/1.1506788

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High permittivity gate dielectric films exhibit significant charge trapping during electrical stressing. In this letter, the impact of low temperature postmetallization anneals on charge trapping in Al2O3 films is reported; anneals were performed in vacuum and forming gas ambient. These anneals not only reduce charge trapping but also move the flatband voltage towards an ideal value that corresponds to the difference in work function. Based on these experiments, it is concluded that absorbed moisture in the films provides hydrogen that concomitantly reduces charge trapping and fixed charge densities in Al2O3 films. (C) 2002 American Institute of Physics.

引用

页码：2608 / 2610

页数：3

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