Three dimensional aspects of the shrinking phenomenon of ArF resist

被引：11

作者：

Laufer, I ^{[1
]}

Eytan, G ^{[1
]}

Dror, O ^{[1
]}

机构：

[1] Appl Mat Inc, IL-76705 Rehovot, Israel

来源：

METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XVI, PTS 1 & 2 | 2002年 / 4689卷

关键词：

ArF resist; resist sluinkage; 3D SEM-metrology;

D O I：

10.1117/12.473531

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Previous studies of the interaction of electron beams with different types of ArF resists have shown the undesired phenomenon of the resist shrinkage. The lateral component of this shrinkage has been detected and quantified easily by SEM CD measurements. However, the vertical extent of this phenomenon has to date remained unknown. In this work we present measurements of the changes in height and sidewall angles of an ArF line by using a new e-beam tilting ability of the Vera SEM 3D. The 3D measurement results show that the height of the line shrinks in similar proportions to the top and bottom CDs, with a difference in the magnitude. Due to higher penetration depth of the e-beam on the top of the line than on the sidewall, the vertical shrinkage reaches steady state more rapidly than the lateral shrinkage. We also found a slight reduction in sidewall angle, which is less than one degree even under high e-beam exposure.

引用

页码：841 / 845

页数：5