Contrast analysis of a (001) twist sub-boundary in silicon in two beam TEM

被引：8

作者：

Bonnet, R

Rousseau, K

Fournel, F

机构：

[1] Ecole Natl Super Electrochim & Electromet Grenoble, Inst Natl Polytech Grenoble, Lab Thermodynam & Physicochim Met, CNRS,UMR 5614, F-38402 St Martin Dheres, France

[2] CEA Grenoble, Dept Rech Fondamentale Mat Condensee, SP2M, ME, F-38054 Grenoble 09, France

[3] CEA, Dept Technol Silicium, LETI, F-38054 Grenoble 09, France

来源：

COMPTES RENDUS PHYSIQUE | 2002年 / 3卷 / 05期

关键词：

contrast; low angle twist boundary; dislocation; silicon;

D O I：

10.1016/S1631-0705(02)01346-4

中图分类号：

P1 [天文学];

学科分类号：

0704 ;

摘要：

A quantitative analysis of the image of a low angle (001) twist boundary in silicon is performed using the two-beam dynamical theory of electron diffraction. The contrast features are discussed as functions of the thickness of the foil and possible elastic relaxation effects of the low angle twist boundary in the thin foil. (C) 2002 Academie des sciences/Editions scientifiques et medicales Elsevier SAS.

引用

页码：657 / 663

页数：7

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