Colossal magnetoresistance magnetic tunnel junctions grown by molecular-beam epitaxy

被引：93

作者：

O'Donnell, J ^{[1
]}

Andrus, AE ^{[1
]}

Oh, S ^{[1
]}

Colla, EV ^{[1
]}

Eckstein, JN ^{[1
]}

机构：

[1] Univ Illinois, Dept Phys, Urbana, IL 61801 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 14期

关键词：

D O I：

10.1063/1.126210

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using molecular-beam-epitaxy growth techniques, we have synthesized ferromagnet/insulator/ferromagnet trilayer heterostructures with the "colossal" magnetoresistance material La1-xSrxMnO3 as the ferromagnet. These trilayer films were fabricated into magnetic tunnel junctions which exhibit magnetoresistance Delta R/R(H) of as much as 450% in 200 Oe applied field at 14 K, and which persists up to similar to 250 K. In situ reflection high-energy electron diffraction (RHEED) allows us to correlate the quality of the epitaxial growth with the magnetoresistive properties. Samples which showed signs of disorder in RHEED also exhibit disorder effects in low-temperature transport and have smaller magnetoresistance which vanishes at lower temperatures. (C) 2000 American Institute of Physics. [S0003-6951(00)01014-7].

引用

页码：1914 / 1916

页数：3

共 19 条

[1] INTERACTION EFFECTS IN DISORDERED FERMI SYSTEMS IN 2 DIMENSIONS [J].