Thermal waves of a nonaxisymmetric flow in a Czochralski-type silicon melt

被引：30

作者：

Nakamura, S ^{[1
]}

Eguchi, M ^{[1
]}

Azami, T ^{[1
]}

Hibiya, T ^{[1
]}

机构：

[1] NEC Corp Ltd, Fundamental Res Labs, Tsukuba, Ibaraki 3058501, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 1999年 / 207卷 / 1-2期

关键词：

Czochralski silicon crystal growth; melt flow; noncontact temperature measurement;

D O I：

10.1016/S0022-0248(99)00357-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Thermal waves due to a nonaxisymmetric flow were observed at a Czochralski-type silicon-melt surface with a carbon-dummy crystal. The wave number and pattern transition of the thermal waves were investigated at various crucible rotation rates. The thermal wave number increased as the crucible rotation rate increased and the rotation rate of the thermal wave was lower than the crucible rotation rate. The nonaxisymmetric flow region for the 5" CZ silicon melt was located at the thermal Rossby numbers of 1-10(2) and was higher than the region obtained for rotating annulus experiments, (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：55 / 61

页数：7

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