Improvement of subthreshold current transport by contact interface modification in p-type organic field-effect transistors

被引：157

作者：

Kano, Masataka ^{[1
,2
]}

Minari, Takeo ^{[2
,3
]}

Tsukagoshi, Kazuhito ^{[3
,4
,5
]}

机构：

[1] Dai Nippon Printing Co Ltd, Res & Dev Ctr, Chiba 2770871, Japan

[2] RIKEN, Wako, Saitama 3510198, Japan

[3] JST, CREST, Kawaguchi, Saitama 3320012, Japan

[4] AIST, Tsukuba, Ibaraki 3058568, Japan

[5] NIMS, Int Ctr Mat Nanoarchitecton, Tsukuba, Ibaraki 3050044, Japan

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 14期

关键词：

charge injection; organic field effect transistors; wide band gap semiconductors; NM CHANNEL-LENGTH; PERFORMANCE;

D O I：

10.1063/1.3115826

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The charge injection efficiency of organic field-effect transistors (OFETs) is found to be a critical factor determining the subthreshold characteristics of these devices. OFETs fabricated using a wide band gap organic semiconductor and gold source/drain contacts display large threshold voltage and poor subthreshold characteristics. Insertion of a metal-oxide charge injection layer at the contact/semiconductor interface lower the injection barrier height, resulting in marked improvements in threshold voltage and subthreshold slope and strong suppression of the short-channel effect. The improved subthreshold characteristics are attributed to enhanced charge injection and the consequent promotion of charge accumulation.

引用

页数：3

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