Bonding and antibonding states in strongly coupled ballistic one-dimensional wires

被引:3
作者
Thomas, KJ [1 ]
Nicholls, JT [1 ]
Tribe, WR [1 ]
Simmons, MY [1 ]
Davies, AG [1 ]
Ritchie, DA [1 ]
Pepper, M [1 ]
机构
[1] Cavendish Lab, Cambridge CB3 0HE, England
来源
PHYSICA E | 2000年 / 6卷 / 1-4期
基金
英国工程与自然科学研究理事会;
关键词
ballistic; strongly coupled; one-dimensional; wave-function mixing; electron-electron interactions;
D O I
10.1016/S1386-9477(99)00116-2
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Low-temperature conductance measurements of strongly coupled ballistic one-dimensional (1D) wires show the formation of bonding and antibonding 1D states. Two parallel 1D wires are defined by a split-gate structure deposited on a GaAs/AlGaAs double quantum well with a 25 K AlGaAs barrier. A midline gate positioned at the centre of the split-gate allows both the widths and electron densities of the two wires to be tuned. At resonance when the wires are matched, symmetric and antisymmetric 1D energy levels are formed, and are separated by an energy gap Delta(SAS) The overlap integral that describes the mixing of the 1D wave functions of different index in the two wires can be altered with a small in-plane magnetic field B. We also present preliminary measurements of the mixing of edge states in the quantum Hall regime. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:581 / 585
页数:5
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