Nanostructured Bulk Silicon as an Effective Thermoelectric Material

被引:446
作者
Bux, Sabah K. [1 ,2 ]
Blair, Richard G. [4 ]
Gogna, Pawan K. [3 ]
Lee, Hohyun [5 ]
Chen, Gang [5 ]
Dresselhaus, Mildred S. [5 ]
Kaner, Richard B. [1 ,2 ]
Fleurial, Jean-Pierre [3 ]
机构
[1] Univ Calif Los Angeles, Dept Chem & Biochem, Los Angeles, CA 90095 USA
[2] Univ Calif Los Angeles, Calif NanoSyst Inst, Los Angeles, CA 90095 USA
[3] CALTECH, Jet Prop Lab, Power & Sensor Syst Grp, Pasadena, CA 91109 USA
[4] Univ Cent Florida, Dept Chem, Orlando, FL 32816 USA
[5] MIT, Cambridge, MA 02139 USA
基金
美国国家科学基金会;
关键词
FIGURE-OF-MERIT; THERMAL-CONDUCTIVITY; TRANSPORT-PROPERTIES; CARRIER MOBILITY; TEMPERATURE; SCATTERING; EFFICIENCY; ALLOYS;
D O I
10.1002/adfm.200900250
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Thermoelectric power sources have consistently demonstrated their extraordinary reliability and longevity for deep space missions and small unattended terrestrial systems. However, more efficient bulk materials and practical devices are required to improve existing technology and expand into large-scale waste heat recovery applications. Research has long focused on complex compounds that best combine the electrical properties of degenerate semiconductors with the low thermal conductivity of glassy materials. Recently it has been found that nanostructucturing is an effective method to decouple electrical and thermal transport parameters. Dramatic reductions in the lattice thermal conductivity are achieved by nanostructuring bilk silicon with limited degeneration in its electron mobility, leading to an unprecedented increase by a factor of 3.5 in its performance over that of the parent single-crystal material. This makes nanostructured bulk (nano-bulk) Si an effective high temperature thermoelectric material that performs at about 70% the level of state-or-the-art Si0.8Ge0.2 but without the need for expensive and rare Ge.
引用
收藏
页码:2445 / 2452
页数:8
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