Experimental evidence for the anisotropic Ostwald ripening of β-silicon nitride

被引:16
作者
Kitayama, M [1 ]
Hirao, K
Toriyama, M
Kanzaki, S
机构
[1] Fine Ceram Res Assoc, Synergy Ceram Lab, Nagoya, Aichi 4638687, Japan
[2] Natl Ind Res Inst Nagoya, Nagoya, Aichi 4638687, Japan
关键词
D O I
10.1111/j.1151-2916.1999.tb02183.x
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
A powder mixture of alpha-Si3N4, Y2O3, and SiO2 was heat-treated in a loose powder state in the temperature range of 1750 degrees-1900 degrees C for 2 h; then, the mixture was acid-rinsed to remove the glassy phase. The widths and lengths of the resulting beta-Si3N4 crystals were analyzed quantitatively. The width-aspect-ratio distribution of the beta-Si3N4 crystals initially showed a strong negative correlation, and then the aspect ratio of crystals with small widths quickly decreased. After a stage in which aspect ratio was almost constant, regardless of the width, the width-aspect-ratio distribution evolved to show a positive correlation in the final stage. This pattern of morphology evolution of the beta-Si3N4 crystals was in good agreement with that predicted by the anisotropic Ostwald ripening model.
引用
收藏
页码:2931 / 2933
页数:3
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