A history of the invention of the transistor and where it will lead us

被引:81
作者
Brinkman, WF [1 ]
Haggan, DE [1 ]
Troutman, WW [1 ]
机构
[1] LUCENT TECHNOL,MICROELECT GRP,MURRAY HILL,NJ 07974
关键词
D O I
10.1109/4.643644
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
[No abstract available]
引用
收藏
页码:1858 / 1865
页数:8
相关论文
共 11 条
[1]   UNIPOLAR FIELD-EFFECT TRANSISTOR [J].
DACEY, GC ;
ROSS, IM .
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1953, 41 (08) :970-979
[2]  
HOERNI JA, 1961, IRE T ELECT DEV 0308, P178
[3]  
Kahng, 1960, SOL STAT DEV RES C P
[4]  
MAY TC, 1978, 16 ANN P REL PHYS S
[5]  
RIORDAN M, CRYSTAL FIRE BIRTH I, P102
[6]  
SCAFF JH, 1949, T AM I MIN MET ENG, V185, P383
[7]   P-N JUNCTION TRANSISTORS [J].
SHOCKLEY, W ;
SPARKS, M ;
TEAL, GK .
PHYSICAL REVIEW, 1951, 83 (01) :151-162
[8]  
SMITS FM, 1925, HIST ENG SCI BELL SY, P28
[9]  
SMITS FM, 1925, HIST ENG SCI BELL SY, P2
[10]  
WASKIEWICZ WK, 1997, SPIES MICROLITHOGRAP