Quantum-critical conductivity scaling for a metal-insulator transition

被引:45
作者
Lee, HL
Carini, JP [1 ]
Baxter, DV
Henderson, W
Grüner, G
机构
[1] Indiana Univ, Dept Phys, Bloomington, IN 47405 USA
[2] Univ Calif Los Angeles, Dept Phys, Los Angeles, CA 90095 USA
关键词
D O I
10.1126/science.287.5453.633
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Temperature (T)- and frequency (omega)-dependent conductivity measurements are reported here in amorphous niobium-silicon alloys with compositions (x) near the zero-temperature metal-insulator transition. There is a one-to-one correspondence between the frequency- and temperature-dependent conductivity on both sides of the critical concentration, thus establishing the quantum-critical nature of the transition. The analysis of the conductivity leads to a universal scaling function and establishes the critical exponents. This scaling can be described by an x-, T-, and omega-dependent characteristic length, the form of which is derived by experiment.
引用
收藏
页码:633 / 636
页数:4
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