Hydrogen detection in individual diamond grains on Si(100) substrate grown by microwave-assisted chemical vapor deposition

Secondary ion mass spectrometry is applied to the detection of hydrogen in individual diamond grains 1-4 mu m in diameter. In the analysis, the primary Cs ion beam was fine-tuned at diameters of 50-200 nm on the surface, and then a combination of presputtering and spot analysis was carried out along a line defined in the scanned C-12 image with a high lateral resolution. The intensity ratios of (H/C-12) in the (111) and (100) planes were determined as having values of 1.36 x 10(-2) and 3.2 x 10(-3), respectively. The value obtained in the (100) plane is background in the analysis. The results demonstrate the potential of the analytical technique for the detection of impurities in materials science.