Synthesis of B/C materials from boron-containing phenyl acetylides

被引:16
作者
Chasmawala, M [1 ]
Chung, TC [1 ]
机构
[1] PENN STATE UNIV,DEPT MAT SCI & ENGN,UNIVERSITY PK,PA 16802
关键词
doped carbons; graphitization; X-ray diffraction; crystallite size;
D O I
10.1016/S0008-6223(97)00019-5
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
This paper discusses the synthesis and graphitization of three boron-containing phenyl acetylides, with B/C ratios between 1/18 and 1/8. The experimental results show that the initial rate at which the graphitic structure develops is strongly related to the molecular structure of the phenyl acetylides. The formation of non-coplanar molecular structure in the stabilization reaction slows down the graphitization reaction. However, all three precursors show effective transformation reactions to produce the boron-substitutional graphitic (B/C) materials at relatively low temperature (2200 degrees C), despite the significant differences in boron concentration and chemical nature of the precursors. Relatively large crystallite size and small d-spacing between interlayers of B/C products were observed by X-ray diffraction. Clearly, boron is not only substitutionally incorporated in the graphitic structure but also enhances the graphitization reaction. (C) 1997 Elsevier Science Ltd.
引用
收藏
页码:641 / 650
页数:10
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