Thermodynamic study on metalorganic vapor-phase epitaxial growth of group III nitrides

An analysis of the metalorganic vapor-phase epitaxial (MOVPE) growth from a thermodynamic point of view is described for binary nitrides: GaN, InN and AlN. The equilibrium partial pressures are calculated for the input V/III ratios. It is shown that there are three deposition modes, growth, etching and droplet modes depending on the partial pressures. The phase diagram for deposition is also calculated for the parameters of growth temperature and extent of ammonia decomposition. The conditions required for InN growth are discussed.