Effects of metallization thickness of ceramic substrates on the reliability of power assemblies under high temperature cycling

被引：102

作者：

Dupont, L.

Khatir, Z.

Lefebvre, S.

Bontemps, S.

机构：

[1] LTN, INRETS, F-94114 Arcueil, France

[2] ENS, UMR CNRS 8029, SATIE, F-94235 Cachan, France

[3] Microsemi Power Modules Prod, F-33700 Merignac, France

来源：

MICROELECTRONICS RELIABILITY | 2006年 / 46卷 / 9-11期

关键词：

D O I：

10.1016/j.microrel.2006.07.057

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This study focuses on the influence of metallization thickness of ceramic substrates on reliability and lifetime of electronic power assemblies under high temperature cycling. The paper presents experimental and numerical results on different test vehicles with a number of DCB substrates with A1N ceramic and different copper thicknesses. It will be shown the influence of the DCB metallization on failure modes such as ceramic fracture and solder delamination under high temperature cycles. Finally, these samples will be compared with DCB substrates equipped with dimples and DAB substrates. Furthermore, the main factors that could increase the lifetime expectancy of power modules in such harsh environments will be identified.

引用

页码：1766 / 1771

页数：6

共 10 条

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